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TO-3P
Discrete Semiconductor Products

IXTQ30N60L2

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Littelfuse/Commercial Vehicle Products

DISC MOSFET N-CH LINEAR L2 TO-3P (3)/ TUBE

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TO-3P
Discrete Semiconductor Products

IXTQ30N60L2

Active
Littelfuse/Commercial Vehicle Products

DISC MOSFET N-CH LINEAR L2 TO-3P (3)/ TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTQ30N60L2
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]335 nC
Input Capacitance (Ciss) (Max) @ Vds10700 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-65-3, TO-3P-3
Power Dissipation (Max) [Max]540 W
Rds On (Max) @ Id, Vgs240 mOhm
Supplier Device PackageTO-3P
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 18.63
30$ 15.08
120$ 14.20
510$ 12.87
NewarkEach 250$ 12.39
500$ 11.51

Description

General part information

IXTQ30N60P Series

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources

No documents available