Deep-Dive with AI
Search across all available documentation for this part.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | EM6K33T2R |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 200 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| FET Feature | 1.2 V |
| FET Feature | Logic Level Gate |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-666, SOT-563 |
| Supplier Device Package | EMT6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.45 | |
| 10 | $ 0.28 | |||
| 100 | $ 0.18 | |||
| 500 | $ 0.13 | |||
| 1000 | $ 0.12 | |||
| 2000 | $ 0.11 | |||
| Digi-Reel® | 1 | $ 0.45 | ||
| 10 | $ 0.28 | |||
| 100 | $ 0.18 | |||
| 500 | $ 0.13 | |||
| 1000 | $ 0.12 | |||
| 2000 | $ 0.11 | |||
| Tape & Reel (TR) | 8000 | $ 0.10 | ||
Description
General part information
EM6K33 Series
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources