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Technical Specifications
Parameters and characteristics for this part
| Specification | LGB18N40ATH |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 18 A |
| Current - Collector Pulsed (Icm) | 50 A |
| Grade | Automotive |
| Input Type | Logic |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 115 W |
| Qualification | AEC-Q101 |
| Supplier Device Package | TO-263 (D2PAK) |
| Td (on/off) @ 25°C [Max] | 4 µs |
| Td (on/off) @ 25°C [Min] | 0.7 µs |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 430 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.77 | 1m+ |
Description
General part information
LGB18N40ATH Series
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive
Documents
Technical documentation and resources