FCA16N60_F109

Obsolete

MOSFET N-CH 600V 16A TO3PN

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 16A TO3PN

Technical Specifications

Parameters and characteristics for this part

Specification	FCA16N60_F109

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	2250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	167 W
Rds On (Max) @ Id, Vgs	260 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Technology
ON Semiconductor FCA16N60_F109	70 nC	167 W	30 V	16 A	10 V	SC-65-3 TO-3P-3	2250 pF	5 V	Through Hole	TO-3PN	260 mOhm	-55 °C	150 °C	600 V	N-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 16A (Tc) 167W (Tc) Through Hole TO-3PN

Technical documentation and resources