Discrete Semiconductor Products

MMSF3P02HDR2G

Obsolete

ON Semiconductor

POWER MOSFET, P CHANNEL, 20 V, 5.6 A, 0.06 OHM, SOIC, SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsDatasheet Product Change Notice EN +1

Discrete Semiconductor Products

MMSF3P02HDR2G

Obsolete

ON Semiconductor

POWER MOSFET, P CHANNEL, 20 V, 5.6 A, 0.06 OHM, SOIC, SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MMSF3P02HDR2G

Current - Continuous Drain (Id) @ 25°C	5.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

MMSF3P02HD Series

Power MOSFET -20V -5.6A 75 mOhm Single P-Channel SO-8

Part	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor MMSF3P02HDR2G	MOSFET (Metal Oxide)	8-SOIC	1400 pF	2.5 W	-55 °C	150 °C	46 nC	4.5 V 10 V	Surface Mount	75 mOhm	20 V	2 V	20 V	5.6 A	P-Channel	8-SOIC	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each (Supplied on Cut Tape)	1	$ 1.65

Description

General part information

MMSF3P02HD Series

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.