
Discrete Semiconductor Products
SQJA60EP-T1_BE3
ActiveVishay General Semiconductor - Diodes Division
POWER MOSFET, N CHANNEL, 60 V, 30 A, 0.0101 OHM, POWERPAK SO, SURFACE MOUNT
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Discrete Semiconductor Products
SQJA60EP-T1_BE3
ActiveVishay General Semiconductor - Diodes Division
POWER MOSFET, N CHANNEL, 60 V, 30 A, 0.0101 OHM, POWERPAK SO, SURFACE MOUNT
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SQJA60EP-T1_BE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | PowerPAK® SO-8 Dual |
| Power Dissipation (Max) | 45 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SQJA60 Series
N-Channel 60 V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8 Dual
Documents
Technical documentation and resources