Discrete Semiconductor Products

SIB912DK-T1-GE3

LTB

MOSFET 2N-CH 20V 1.5A SC75-6L

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Discrete Semiconductor Products

LTB

MOSFET 2N-CH 20V 1.5A SC75-6L

Technical Specifications

Parameters and characteristics for this part

Specification	SIB912DK-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	95 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-75-6L Dual
Power - Max [Max]	3.1 W
Rds On (Max) @ Id, Vgs	216 mOhm
Supplier Device Package	PowerPAK® SC-75-6L Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Configuration	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Feature	Power - Max [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type
Vishay General Semiconductor - Diodes Division SIB912DK-T1-GE3	2 N-Channel (Dual)	1 V	PowerPAK® SC-75-6L Dual	20 V	216 mOhm	95 pF	PowerPAK® SC-75-6L Dual	-55 °C	150 °C	1.5 A	Logic Level Gate	3.1 W	MOSFET (Metal Oxide)	3 nC	Surface Mount

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General part information

Mosfet Array 20V 1.5A 3.1W Surface Mount PowerPAK® SC-75-6L Dual

Technical documentation and resources