Discrete Semiconductor Products

SQM70060EL_GE3

Active

MOSFET N-CH 100V 75A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 100V 75A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SQM70060EL_GE3

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	5500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	166 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	5.9 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Mounting Type	Grade	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SQM70060EL_GE3	5500 pF	AEC-Q101	MOSFET (Metal Oxide)	4.5 V 10 V	20 V	100 V	100 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	N-Channel	-55 °C	175 ░C	166 W	2.5 V	Surface Mount	Automotive	5.9 mOhm	75 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 75A (Tc) 166W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources