Specification	NVBGS1D2N08H

Current - Continuous Drain (Id) @ 25°C	290 A, 43 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	10830 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	259 W, 5.7 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.34 mOhm
Supplier Device Package	D2PAK-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NVBGS1D2N08H Series

Power MOSFET, 80 V, 1.2 mΩ, 353 A, Single N−Channel

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Qualification	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Grade	Vgs (Max)
ON Semiconductor NVBGS1D2N08H	10830 pF	1.34 mOhm	80 V	MOSFET (Metal Oxide)	10 V	-55 °C	175 ░C	N-Channel	160 nC	5.7 W 259 W	4 V	D2PAK TO-263-7	AEC-Q101	D2PAK-7	Surface Mount	43 A 290 A	Automotive	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NVBGS1D2N08H Series

Automotive Power MOSFET in a D2PAK package for efficient designs with high thermal performance. Gull-wings leads for an improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.