UPA2765T1A-E2-AY

Obsolete

NCH SINGLE POWER MOSFET 30V 100A 1.3MOHM 8PIN HVSON (6051)

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

NCH SINGLE POWER MOSFET 30V 100A 1.3MOHM 8PIN HVSON (6051)

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2765T1A-E2-AY

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	152 nC
Input Capacitance (Ciss) (Max) @ Vds	6550 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	1.5 W, 83 W
Rds On (Max) @ Id, Vgs	2.9 mOhm
Supplier Device Package	8-HVSON (5x5.4)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Single Power Mosfet 30V 100A 1.3Mohm 8Pin HVSON (6051)

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)
Renesas Electronics Corporation UPA2765T1A-E2-AY	152 nC	Surface Mount	1.5 W 83 W	2.9 mOhm	N-Channel	4.5 V 10 V	8-PowerVDFN	6550 pF	150 °C	MOSFET (Metal Oxide)	30 V	100 A	8-HVSON (5x5.4)	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources

No documents available