Discrete Semiconductor Products
RQ3L070BGTB1
ActiveRohm Semiconductor
NCH 60V 20A, HSMT8G, POWER MOSFET
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Discrete Semiconductor Products
RQ3L070BGTB1
ActiveRohm Semiconductor
NCH 60V 20A, HSMT8G, POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ3L070BGTB1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A, 7 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 7.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 460 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 2 W, 15 W |
| Rds On (Max) @ Id, Vgs | 24.7 mOhm |
| Supplier Device Package [custom] | 8-HSMT |
| Supplier Device Package [x] | 3.2 |
| Supplier Device Package [y] | 3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 309 | $ 0.84 | |
Description
General part information
RQ3L070BG Series
RQ3L070BG is a power MOSFET with low on-resistance, suitable for Primary side switch, motor drives, DC/DC converter.
Documents
Technical documentation and resources