Discrete Semiconductor Products

VFT3080S-E3/4W

Active

DIODE SCHOTTKY 80V 30A 3-PIN(3+TAB) ITO-220AB TUBE

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE SCHOTTKY 80V 30A 3-PIN(3+TAB) ITO-220AB TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	VFT3080S-E3/4W

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-3
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Package / Case	Current - Average Rectified (Io) (per Diode)	Diode Configuration
Vishay General Semiconductor - Diodes Division VFT3080S-E3/4W	150 °C	-55 °C	30 A	950 mV	Through Hole	80 V	200 mA 500 ns	1 mA	TO-220-3	Schottky	TO-220-3
Vishay General Semiconductor - Diodes Division VFT3080C-M3/4W	150 °C	-55 °C		820 mV	Through Hole	80 V	200 mA 500 ns	700 µA	ITO-220AB	Schottky	TO-220-3 Full Pack Isolated Tab	15 A	1 Pair Common Cathode
Vishay General Semiconductor - Diodes Division VFT3080S-M3/4W	150 °C	-55 °C	30 A	950 mV	Through Hole	80 V	200 mA 500 ns	1 mA	TO-220-3	Schottky	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 80 V 30A Through Hole TO-220-3

Technical documentation and resources