Discrete Semiconductor Products

RN2427TE85LF

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TRANS DIGITAL BJT PNP 50V 0.8A 200MW 3-PIN S-MINI T/R

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Discrete Semiconductor Products

Active

TRANS DIGITAL BJT PNP 50V 0.8A 200MW 3-PIN S-MINI T/R

Technical Specifications

Parameters and characteristics for this part

Specification	RN2427TE85LF

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	90
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	S-Mini
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Resistor - Base (R1)	Package / Case	Supplier Device Package	Mounting Type	Transistor Type	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage RN2427TE85LF	200 mW	250 mV	800 mA	500 nA	50 V	200 MHz	2.2 kOhm	SC-59 SOT-23-3 TO-236-3	S-Mini	Surface Mount	PNP - Pre-Biased	10 kOhms	90

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 800 mA 200 MHz 200 mW Surface Mount S-Mini

Technical documentation and resources