UPA2812T1L-E2-AT

Obsolete

MOSFET P-CH 30V 30A 8HWSON

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 30A 8HWSON

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2812T1L-E2-AT

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	3740 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	8-HWSON (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Operating Temperature	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Renesas Electronics Corporation UPA2812T1L-E2-AT	150 °C	30 V	8-HWSON (3.3x3.3)	MOSFET (Metal Oxide)	P-Channel	4.8 mOhm	30 A	20 V	4.5 V 10 V	8-PowerVDFN	1.5 W	100 nC	Surface Mount	3740 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 30A (Tc) 1.5W (Ta) Surface Mount 8-HWSON (3.3x3.3)

Technical documentation and resources