TLV2314IDR
ActiveDUAL, 5.5-V, 3-MHZ, RRIO OPERATIONAL AMPLIFIER
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TLV2314IDR
ActiveDUAL, 5.5-V, 3-MHZ, RRIO OPERATIONAL AMPLIFIER
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TLV2314IDR |
|---|---|
| Amplifier Type | General Purpose |
| Current - Input Bias | 1 pA |
| Current - Output / Channel | 20 mA |
| Current - Supply | 150 µA |
| Gain Bandwidth Product | 3 MHz |
| Mounting Type | Surface Mount |
| Number of Circuits | 2 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Output Type | Rail-to-Rail |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Slew Rate | 1.5 V/µs |
| Supplier Device Package | 8-SOIC |
| Voltage - Input Offset | 750 µV |
| Voltage - Supply Span (Max) [Max] | 5.5 V |
| Voltage - Supply Span (Min) [Min] | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.03 | |
| 10 | $ 0.92 | |||
| 25 | $ 0.87 | |||
| 100 | $ 0.72 | |||
| 250 | $ 0.67 | |||
| 500 | $ 0.59 | |||
| 1000 | $ 0.47 | |||
| Digi-Reel® | 1 | $ 1.03 | ||
| 10 | $ 0.92 | |||
| 25 | $ 0.87 | |||
| 100 | $ 0.72 | |||
| 250 | $ 0.67 | |||
| 500 | $ 0.59 | |||
| 1000 | $ 0.47 | |||
| Tape & Reel (TR) | 2500 | $ 0.44 | ||
| 5000 | $ 0.41 | |||
| 12500 | $ 0.40 | |||
| 25000 | $ 0.39 | |||
| Texas Instruments | LARGE T&R | 1 | $ 0.76 | |
| 100 | $ 0.58 | |||
| 250 | $ 0.43 | |||
| 1000 | $ 0.31 | |||
Description
General part information
TLV2314 Series
The TLV314 family of single-, dual-, and quad-channel operational amplifiers represents a new generation of low-power, general-purpose operational amplifiers. Rail-to-rail input and output swings (RRIO), low quiescent current (150 µA typically at 5 V) combine with a wide bandwidth of 3 MHz to make this family very attractive for a variety of battery-powered applications that require a good balance between cost and performance. Additionally, the TLV314 family architecture achieves a low input bias current of 1 pA, allowing for applications with MΩ source impedances.
The robust design of the TLV314 devices provides ease-of-use to the circuit designer: unity-gain stability, RRIO, capacitive loads of up to 300 pF, an integrated RF/EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM).
These devices are optimized for low-voltage operation as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V), and are specified over the extended industrial temperature range of –40°C to +125°C.
Documents
Technical documentation and resources
