Discrete Semiconductor Products

ECH8419-TL-H

Obsolete

TRANS MOSFET N-CH SI 35V 9A 8-PIN ECH T/R

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS MOSFET N-CH SI 35V 9A 8-PIN ECH T/R

Technical Specifications

Parameters and characteristics for this part

Specification	ECH8419-TL-H

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	35 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	960 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	8-ECH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	FET Type	Technology	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)
ON Semiconductor ECH8419-TL-H	150 °C	960 pF	2.6 V	17 mOhm	4 V	10 V	19 nC	35 V	N-Channel	MOSFET (Metal Oxide)	20 V	Surface Mount	9 A	8-ECH	1.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 35 V 9A (Ta) 1.5W (Ta) Surface Mount 8-ECH

Technical documentation and resources

No documents available