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IDV03S60C
Discrete Semiconductor Products

RJS6005TDPP-EJ#T2

Obsolete
Renesas Electronics Corporation

DIODE SIC 600V 15A TO220FP-2L

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IDV03S60C
Discrete Semiconductor Products

RJS6005TDPP-EJ#T2

Obsolete
Renesas Electronics Corporation

DIODE SIC 600V 15A TO220FP-2L

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationRJS6005TDPP-EJ#T2
Current - Average Rectified (Io)15 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-220-2 Full Pack
Reverse Recovery Time (trr)15 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220FP-2L
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If [Max]1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 11$ 29.09

Description

General part information

RJS6005TDPP-EJ Series

We offer high-performance products with low forward voltage (VF) and high-speed reverse recovery time (trr) for increasing device efficiency. We are also employing a new material (silicon carbide: SiC) for products with even higher efficiency.

Documents

Technical documentation and resources