Discrete Semiconductor Products

SFAS806G

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DIODE GEN PURP 400V 8A TO263AB

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Discrete Semiconductor Products

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DIODE GEN PURP 400V 8A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	SFAS806G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)	35 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	8 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Technology	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Voltage - Forward (Vf) (Max) @ If [Max]
Taiwan Semiconductor Corporation SFAS806G	Surface Mount	400 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	8 A	TO-263AB (D2PAK)	10 µA	200 mA 500 ns	-55 °C	150 °C	60 pF	Standard	35 ns	8 A	1.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 8A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources