Discrete Semiconductor Products

PMV185XN,215

Obsolete

MOSFET N-CH 30V 1.1A TO236AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 1.1A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV185XN,215

Current - Continuous Drain (Id) @ 25°C	1.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.3 nC
Input Capacitance (Ciss) (Max) @ Vds	76 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.275 W, 325 mW
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	SOT-23 (TO-236AB)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
Freescale Semiconductor - NXP PMV185XN,215	1.275 W 325 mW	2.5 V 4.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	76 pF	30 V	SOT-23 (TO-236AB)	12 V	1.5 V	N-Channel	1.3 nC	1.1 A	250 mOhm	Surface Mount
Freescale Semiconductor - NXP PMV16UN,215	510 mW	1.8 V 4.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	670 pF	20 V	SOT-23 (TO-236AB)	8 V	1 V	N-Channel		5.8 A	18 mOhm	Surface Mount	11 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 1.1A (Ta) 325mW (Ta), 1.275W (Tc) Surface Mount SOT-23 (TO-236AB)

Technical documentation and resources