Discrete Semiconductor Products

PMV185XN,215

Obsolete

MOSFET N-CH 30V 1.1A TO236AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 1.1A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV185XN,215

Current - Continuous Drain (Id) (Ta)	1.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	1.3 nC
Input Capacitance (Ciss) (Max)	76 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23 (TO-236AB)
Power Dissipation (Max)	325 mW, 1.275 W
Rds On (Max)	250 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

Part	Package Name	Input Capacitance (Ciss) (Max)	Technology	Vgs(th) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Mounting Type	Package / Case	Power Dissipation (Max)	FET Type	Vgs (Max)
NXP USA Inc. PMV185XN,215	SOT-23 (TO-236AB)	76 pF	MOSFET (Metal Oxide)	1.5 V	2.5 V	4.5 V	250 mOhm	1.1 A	-55 °C	150 °C	30 V	1.3 nC	Surface Mount	SC-59 SOT-23-3 TO-236-3	1.275 W 325 mW	N-Channel	12 V
NXP USA Inc. PMV16UN,215	SOT-23 (TO-236AB)	670 pF	MOSFET (Metal Oxide)	1 V	1.8 V	4.5 V	18 mOhm	5.8 A	-55 °C	150 °C	20 V	11 nC	Surface Mount	SC-59 SOT-23-3 TO-236-3	510 mW	N-Channel	8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 30 V 1.1A (Ta) 325mW (Ta), 1.275W (Tc) Surface Mount SOT-23 (TO-236AB)

Technical documentation and resources