Discrete Semiconductor Products

2N3811U

Obsolete

TRANS 2PNP 60V 0.05A TO-78

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS 2PNP 60V 0.05A TO-78

Technical Specifications

Parameters and characteristics for this part

Specification	2N3811U

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-78-6 Metal Can
Power - Max [Max]	350 mW
Supplier Device Package	TO-78-6
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Power - Max [Max]	Grade	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Qualification	Mounting Type	Supplier Device Package
Microsemi Corporation JAN2N3811	350 mW	Military	10 µA	60 V	300	TO-78-6 Metal Can	200 °C	-65 °C	50 mA	2 PNP (Dual)	250 mV	MIL-PRF-19500/336	Through Hole	TO-78-6
Microsemi Corporation JANTXV2N3811U	350 mW	Military	10 µA	60 V	300	TO-78-6 Metal Can	200 °C	-65 °C	50 mA	2 PNP (Dual)	250 mV	MIL-PRF-19500/336	Through Hole	TO-78-6
Microsemi Corporation JAN2N3811L	350 mW	Military	10 µA	60 V	300	TO-78-6 Metal Can	200 °C	-65 °C	50 mA	2 PNP (Dual)	250 mV	MIL-PRF-19500/336	Through Hole	TO-78-6
Microsemi Corporation JANTX2N3811	350 mW	Military	10 µA	60 V	300	TO-78-6 Metal Can	200 °C	-65 °C	50 mA	2 PNP (Dual)	250 mV	MIL-PRF-19500/336	Through Hole	TO-78-6
Microsemi Corporation JANTX2N3811U	350 mW	Military	10 µA	60 V	300	TO-78-6 Metal Can	200 °C	-65 °C	50 mA	2 PNP (Dual)	250 mV	MIL-PRF-19500/336	Through Hole	TO-78-6
Microsemi Corporation JANTXV2N3811	350 mW	Military	10 µA	60 V	300	TO-78-6 Metal Can	200 °C	-65 °C	50 mA	2 PNP (Dual)	250 mV	MIL-PRF-19500/336	Through Hole	TO-78-6
Microsemi Corporation 2N3811U	350 mW		10 µA	60 V	300	TO-78-6 Metal Can	200 °C	-65 °C	50 mA	2 PNP (Dual)	250 mV		Through Hole	TO-78-6
Microsemi Corporation 2N3811L	350 mW		10 µA	60 V	300	TO-78-6 Metal Can	200 °C	-65 °C	50 mA	2 PNP (Dual)	250 mV		Through Hole	TO-78-6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 23.14

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6

Technical documentation and resources

No documents available