Specification	CUHS20F30,H3F

Capacitance @ Vr, F	380 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Package / Case	2-SMD, Flat Leads
Speed	500 ns, 200 mA
Supplier Device Package	US2H
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	470 mV

CUHS20 Series

Diodes, 30 V/2 A Schottky Barrier Diode, SOD-323HE(US2H)

Part	Speed	Supplier Device Package	Package / Case	Technology	Capacitance @ Vr, F	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]
Toshiba Semiconductor and Storage CUHS20S40,H3F	200 mA 500 ns	US2H	2-SMD Flat Leads	Schottky	290 pF	2 A	150 °C	470 mV	Surface Mount	40 V	300 µA
Toshiba Semiconductor and Storage CUHS20F30,H3F	200 mA 500 ns	US2H	2-SMD Flat Leads	Schottky	380 pF	2 A	150 °C	470 mV	Surface Mount	30 V	60 µA
Toshiba Semiconductor and Storage CUHS20F40,H3F	200 mA 500 ns	US2H	2-SMD Flat Leads	Schottky	300 pF	2 A	150 °C		Surface Mount	40 V	60 µA	540 mV
Toshiba Semiconductor and Storage CUHS20S30,H3F	200 mA 500 ns	US2H	2-SMD Flat Leads	Schottky	390 pF	2 A	150 °C		Surface Mount	30 V	500 µA	410 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes, 30 V/2 A Schottky Barrier Diode, SOD-323HE(US2H)

Technical documentation and resources