Specification	NTMFS0D9N04XLT1G

Current - Continuous Drain (Id) @ 25°C	278 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	5160 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	136 W
Rds On (Max) @ Id, Vgs	0.9 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

NTMFS0D9N04XL Series

Power MOSFET, Single, N-Channel, 40V, 0.9mΩ, 278A, SO8-FL 5x6

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)
ON Semiconductor NTMFS0D9N04XLT1G	-55 °C	175 ░C	70 nC	MOSFET (Metal Oxide)	4.5 V 10 V	8-PowerTDFN 5 Leads	278 A	5160 pF	Surface Mount	0.9 mOhm	5-DFN (5x6)	8-SOFL	2.2 V	N-Channel	136 W	40 V	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.77
		10	$ 1.47
		100	$ 1.17
		500	$ 0.99
	Digi-Reel®	1	$ 1.77
		10	$ 1.47
		100	$ 1.17
		500	$ 0.99
	Tape & Reel (TR)	1500	$ 0.84
		3000	$ 0.80
		7500	$ 0.77
		10500	$ 0.74
Newark	Each (Supplied on Full Reel)	1000	$ 1.94
ON Semiconductor	N/A	1	$ 0.79

Description

General part information

NTMFS0D9N04XL Series

The latest 40V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower On-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. Smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance.