Specification	BUK763R8-80E,118

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	169 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	12030 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	357 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

BUK763 Series

N-channel TrenchMOS standard level FET

Part	Package / Case	Supplier Device Package	FET Type	Grade	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
Nexperia USA Inc. BUK763R1-60E,118	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	N-Channel	Automotive	120 A	3.1 mOhm	Surface Mount	60 V	MOSFET (Metal Oxide)	175 °C	-55 °C	114 nC	AEC-Q101	10 V	20 V	8920 pF
Nexperia USA Inc. BUK763R8-80E,118	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	N-Channel	Automotive	120 A	3.8 mOhm	Surface Mount	80 V	MOSFET (Metal Oxide)	175 °C	-55 °C	169 nC	AEC-Q101	10 V	20 V	12030 pF	357 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.61
		10	$ 3.03
		100	$ 2.45
	Digi-Reel®	1	$ 3.61
		10	$ 3.03
		100	$ 2.45
	N/A	699	$ 6.01
	Tape & Reel (TR)	800	$ 1.74

Description

General part information

BUK763 Series

Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.