Discrete Semiconductor Products

SISA04DN-T1-GE3

Active

MOSFET N-CH 30V 40A PPAK1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 30V 40A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SISA04DN-T1-GE3

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	77 nC
Input Capacitance (Ciss) (Max) @ Vds	3595 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	3.7 W, 52 W
Rds On (Max) @ Id, Vgs	2.15 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Vgs (Max)
Vishay General Semiconductor - Diodes Division SISA04DN-T1-GE3	2.15 mOhm	3595 pF	2.2 V	Surface Mount	PowerPAK® 1212-8	30 V	77 nC	N-Channel	4.5 V 10 V	PowerPAK® 1212-8	-55 °C	150 °C	MOSFET (Metal Oxide)	3.7 W 52 W	-16 V 20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources