Discrete Semiconductor Products

FGP30N6S2D

Obsolete

IGBT 600V 45A 167W TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT 600V 45A 167W TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	FGP30N6S2D

Current - Collector (Ic) (Max) [Max]	45 A
Current - Collector Pulsed (Icm)	108 A
Gate Charge	23 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	167 W
Reverse Recovery Time (trr)	46 ns
Supplier Device Package	TO-220-3
Switching Energy	100 µJ, 55 µJ
Td (on/off) @ 25°C	6 ns, 40 ns
Test Condition	12 A, 15 V, 390 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Power - Max [Max]	Test Condition	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Gate Charge	Current - Collector Pulsed (Icm)
ON Semiconductor FGP30N6S2D	TO-220-3	2.5 V	-55 °C	150 °C	TO-220-3	Through Hole	46 ns	6 ns 40 ns	167 W	10 Ohm 12 A 15 V 390 V	45 A	600 V	55 µJ 100 µJ	23 nC	108 A
ON Semiconductor FGP30N6S2	TO-220-3	2.5 V	-55 °C	150 °C	TO-220-3	Through Hole		6 ns 40 ns	167 W	10 Ohm 12 A 15 V 390 V	45 A	600 V	55 µJ 100 µJ	23 nC	108 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 600 V 45 A 167 W Through Hole TO-220-3

Technical documentation and resources