Specification	NDSH50120C-F155

Capacitance @ Vr, F	3691 pF
Current - Average Rectified (Io)	53 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.75 V

NDSH50120C-F155 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L

Part	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Mounting Type	Technology	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case
ON Semiconductor NDSH50120C-F155	1.75 V	175 ░C	-55 C	1.2 kV	No Recovery Time	Through Hole	SiC (Silicon Carbide) Schottky	3691 pF	0 ns	TO-247-2	200 µA	53 A	TO-247-2

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 29.26
		10	$ 21.80
		25	$ 19.89
		100	$ 17.76
		250	$ 16.86
ON Semiconductor	N/A	1	$ 17.98

Description

General part information

NDSH50120C-F155 Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.