Specification	KSE350STU

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	20 W
Supplier Device Package	TO-126-3
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	300 V

KSE350(LEGACY%20FAIRCHILD) Series

PNP Epitaxial Silicon Transistor

Part	Transistor Type	Mounting Type	Power - Max [Max]	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Operating Temperature
ON Semiconductor KSE350STU	PNP	Through Hole	20 W	TO-126-3	TO-126-3 TO-225AA	500 mA	300 V	30	100 µA	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources