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SOT223-3L
Discrete Semiconductor Products

FZT3019

Obsolete
ON Semiconductor

NPN MEDIUM POWER TRANSISTOR

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SOT223-3L
Discrete Semiconductor Products

FZT3019

Obsolete
ON Semiconductor

NPN MEDIUM POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFZT3019
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]1 W
Supplier Device PackageSOT-223-4
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FZT3019 Series

NPN Medium Power Transistor