Discrete Semiconductor Products

BD140G

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BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 80 V, 1.5 A, 65 W, TO-225AA, THROUGH HOLE

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Discrete Semiconductor Products

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BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 80 V, 1.5 A, 65 W, TO-225AA, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	BD140G

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.25 W
Supplier Device Package	TO-126
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Operating Temperature
ON Semiconductor BD140G	-55 °C	150 °C	1.5 A	Through Hole	80 V	500 mV	PNP	100 nA	1.25 W	TO-126-3 TO-225AA	40	TO-126
ON Semiconductor BD1406S			1.5 A	Through Hole	80 V	500 mV	PNP	100 nA	1.25 W	TO-126-3 TO-225AA	40	TO-126-3	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Collector-Emitter Sustaining Voltage 80 V

High DC Current Gain

BD 136, 138, 140 are complementary with BD 135, 137, 139

Technical documentation and resources