Specification	KSC2383YTA

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160 hFE
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

KSC2383 Series

NPN Epitaxial Silicon Transistor

Part	Transistor Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Supplier Device Package	Operating Temperature	Mounting Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]
ON Semiconductor KSC2383YBU	NPN	1 A	900 mW	TO-226-3 TO-92-3 Long Body	TO-92-3	150 °C	Through Hole	100 MHz	160 V	1.5 V	160 hFE	1 µA
ON Semiconductor KSC2383YTA	NPN	1 A	900 mW	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92-3	150 °C	Through Hole	100 MHz	160 V	1.5 V	160 hFE	1 µA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources