Discrete Semiconductor Products

FDD45AN06LA0

Obsolete

MOSFET N-CH 60V 5.2A/25A TO252AA

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 5.2A/25A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	FDD45AN06LA0

Current - Continuous Drain (Id) @ 25°C	5.2 A, 25 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	880 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	55 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDD45AN06LA0	3 V	N-Channel	20 V	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3	880 pF	Surface Mount	36 mOhm	55 W	-55 °C	175 ░C	60 V	MOSFET (Metal Oxide)	11 nC	10 V	5 V	5.2 A 25 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 5.2A (Ta), 25A (Tc) 55W (Tc) Surface Mount TO-252AA

Technical documentation and resources