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MEO450-12DA
Discrete Semiconductor Products

MEO450-12DA

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LITTELFUSE

DIODE GEN PURP 1.2KV 453A Y4-M6

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MEO450-12DA
Discrete Semiconductor Products

MEO450-12DA

Active
LITTELFUSE

DIODE GEN PURP 1.2KV 453A Y4-M6

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMEO450-12DA
Current - Average Rectified (Io)453 A
Current - Reverse Leakage @ Vr24 mA
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseY4-M6
Reverse Recovery Time (trr)500 ns
Speed500 ns, 200 mA
Supplier Device PackageY4-M6
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If1.96 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBox 1$ 84.211m+
10$ 76.87
100$ 69.54
N/A 0$ 84.181m+

Description

General part information

MEO450-12DA Series

The Fast Single Diode series offers various packages and breakdown voltages up to 1200V. Utilizing FRED dies enables fast reverse recovery capabilities.

Documents

Technical documentation and resources