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PowerPAK® SO-8 Dual
Discrete Semiconductor Products

SQJB70EP-T1_GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET 2N-CH 100V 11.3A PPAK SO8

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PowerPAK® SO-8 Dual
Discrete Semiconductor Products

SQJB70EP-T1_GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET 2N-CH 100V 11.3A PPAK SO8

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSQJB70EP-T1_GE3
Configuration2 N-Channel (Dual)
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs7 nC
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8 Dual
Power - Max [Max]27 W
QualificationAEC-Q101
Supplier Device PackagePowerPAK® SO-8 Dual
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.92
10$ 0.75
100$ 0.59
500$ 0.50
1000$ 0.40
Digi-Reel® 1$ 0.92
10$ 0.75
100$ 0.59
500$ 0.50
1000$ 0.40
Tape & Reel (TR) 3000$ 0.38
6000$ 0.36
9000$ 0.35

Description

General part information

SQJB70 Series

Mosfet Array 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual

Documents

Technical documentation and resources