Discrete Semiconductor Products

MMBT2222A

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TRANS NPN 40V 0.6A SOT-23

Discrete Semiconductor Products

Active

TRANS NPN 40V 0.6A SOT-23

Technical Specifications

Parameters and characteristics for this part

Specification	MMBT2222A

Current - Collector (Ic) (Max)	0.6 mA
Current - Collector Cutoff (Max)	10 nA
DC Current Gain (hFE) (Min)	100
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23
Power - Max	350 mW
Transistor Type	NPN
Vce Saturation (Max)	1 V
Voltage - Collector Emitter Breakdown (Max)	40 V

Part	Current - Collector (Ic) (Max)	Mounting Type	Vce Saturation (Max)	Transistor Type	DC Current Gain (hFE) (Min)	Package Name	Package / Case	Current - Collector Cutoff (Max)	Power - Max	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature (Max)	Operating Temperature (Min)	Frequency - Transition
ANBON SEMICONDUCTOR (INT'L) LIMITED MMBT2222A	0.6 mA	Surface Mount	1 V	NPN	100	SOT-23	SC-59 SOT-23-3 TO-236-3	10 nA	350 mW	40 V	150 °C	-55 °C	300 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 350 mW Surface Mount SOT-23

Technical documentation and resources