Discrete Semiconductor Products

2SD1691-AZ

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Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

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Documents2SD1691 Data Sheet

Discrete Semiconductor Products

2SD1691-AZ

Active

Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

Deep-Dive with AI

Documents2SD1691 Data Sheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1691-AZ

Current - Collector (Ic) (Max) [Max]	5 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.3 W
Supplier Device Package	TO-126
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

2SD1691 Series

Bipolar Power Transistors

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Power - Max [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Package / Case
Renesas Electronics Corporation 2SD1691-AZ	300 mV	5 A	60 V	TO-126	100	Through Hole	1.3 W	NPN	10 µA	150 °C	TO-126-3 TO-225AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	492	$ 0.61
	N/A	8720	$ 0.89

Description

General part information

2SD1691 Series

A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

Documents

Technical documentation and resources

2SD1691 Data Sheet

Datasheet