Discrete Semiconductor Products

1N5712

Obsolete

RF DIODE SCHOTTKY 20V 250MW

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Discrete Semiconductor Products

Obsolete

RF DIODE SCHOTTKY 20V 250MW

Technical Specifications

Parameters and characteristics for this part

Specification	1N5712

Capacitance @ Vr, F	1.2 pF
Current - Average Rectified (Io)	75 mA
Current - Reverse Leakage @ Vr	150 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AH, Axial, DO-35
Speed	200 mA
Speed	Any Speed
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V

Part	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Speed	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F
Broadcom Limited 1N5712#T25	75 mA	Schottky	20 V	200 C	-65 C	Axial DO-204AH DO-35	200 mA	Any Speed	Through Hole	150 nA	1.2 pF
Broadcom Limited 1N5712	75 mA	Schottky	20 V	200 C	-65 C	Axial DO-204AH DO-35	200 mA	Any Speed	Through Hole	150 nA	1.2 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 20 V 75mA Through Hole

Technical documentation and resources