UPA2670T1R-E2-AX

Obsolete

PCH DUAL POWER MOSFET -20V -3.0A 79MOHM 6PINHUSON2020

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Discrete Semiconductor Products

Obsolete

PCH DUAL POWER MOSFET -20V -3.0A 79MOHM 6PINHUSON2020

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2670T1R-E2-AX

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	5.1 nC
Input Capacitance (Ciss) (Max) @ Vds	473 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-WFDFN Exposed Pad
Power - Max [Max]	2.3 W
Supplier Device Package	6-HUSON (2x2)
Technology	MOSFET (Metal Oxide)

Pch Dual Power Mosfet -20V -3.0A 79Mohm 6Pinhuson2020

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Drain to Source Voltage (Vdss)	FET Feature	FET Feature	Configuration	Technology	Supplier Device Package	Operating Temperature	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Renesas Electronics Corporation UPA2670T1R-E2-AX	Surface Mount	3 A	2.3 W	20 V	1.8 V	Logic Level Gate	2 P-Channel	MOSFET (Metal Oxide)	6-HUSON (2x2)	150 °C	6-WFDFN Exposed Pad	5.1 nC	473 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources