Discrete Semiconductor Products

SF5408-TAP

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DIODE GEN PURP 1KV 3A SOD64

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Discrete Semiconductor Products

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DIODE GEN PURP 1KV 3A SOD64

Technical Specifications

Parameters and characteristics for this part

Specification	SF5408-TAP

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-64, Axial
Reverse Recovery Time (trr)	75 ns
Speed	500 ns, 200 mA
Supplier Device Package	SOD-64
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package
Vishay General Semiconductor - Diodes Division SF5408-TAP	175 ░C	-55 °C	Through Hole	200 mA 500 ns	75 ns	1.7 V	SOD-64 Axial	3 A	1000 V	Standard	5 µA	SOD-64

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General part information

Diode 1000 V 3A Through Hole SOD-64

Technical documentation and resources