Discrete Semiconductor Products

SIB404DK-T1-GE3

Obsolete

MOSFET N-CH 12V 9A PPAK SC75-6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 12V 9A PPAK SC75-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIB404DK-T1-GE3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-75-6
Power Dissipation (Max)	13 W, 2.5 W
Rds On (Max) @ Id, Vgs [Max]	19 mOhm
Supplier Device Package	PowerPAK® SC-75-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	800 mV

Part	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIB404DK-T1-GE3	N-Channel	12 V	Surface Mount	9 A	19 mOhm	MOSFET (Metal Oxide)	800 mV	5 V	4.5 V	15 nC	PowerPAK® SC-75-6	PowerPAK® SC-75-6	2.5 W 13 W	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 12 V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Technical documentation and resources