Discrete Semiconductor Products

SUP75P05-08-E3

Obsolete

MOSFET P-CH 55V 75A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 55V 75A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP75P05-08-E3

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	225 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SUP75P05-08-E3	Through Hole	4.5 V 10 V	75 A	8 mOhm	3 V	P-Channel	MOSFET (Metal Oxide)	20 V	-55 °C	175 ░C	TO-220-3	TO-220AB	8500 pF	225 nC	55 V
Vishay General Semiconductor - Diodes Division SUP75N03-04-E3	Through Hole	4.5 V 10 V	75 A	4 mOhm	3 V	N-Channel	MOSFET (Metal Oxide)	20 V	-55 °C	175 ░C	TO-220-3	TO-220AB			30 V	187 W	3.7 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 55 V 75A (Tc) 3.7W (Ta), 250W (Tc) Through Hole TO-220AB

Technical documentation and resources