Integrated Circuits (ICs)

ISL2111ABZ-T

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Renesas Electronics Corporation

100V, 3A/4A PEAK, HIGH FREQUENCY HALF-BRIDGE DRIVERS

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Search across all available documentation for this part.

DocumentsISL2110, ISL2111 Datasheet

Integrated Circuits (ICs)

ISL2111ABZ-T

Active

Renesas Electronics Corporation

100V, 3A/4A PEAK, HIGH FREQUENCY HALF-BRIDGE DRIVERS

Deep-Dive with AI

DocumentsISL2110, ISL2111 Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	ISL2111ABZ-T

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	3 A
Current - Peak Output (Source, Sink) [custom]	4 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	114 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.2 V, 1.4 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	7.5 ns
Rise / Fall Time (Typ) [custom]	9 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	14 V
Voltage - Supply [Min]	8 V

ISL2111 Series

100V, 3A/4A Peak, High Frequency Half-Bridge Drivers

Part	Channel Type	Package / Case	Logic Voltage - VIL, VIH	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	High Side Voltage - Max (Bootstrap) [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Type	Number of Drivers	Input Type	Package / Case [y]	Package / Case [x]
Renesas Electronics Corporation ISL2111BR4Z-T	Independent	8-VDFN Exposed Pad	1.4 V 2.2 V	Surface Mount	8 V	14 V	114 V	3 A	4 A	Half-Bridge	7.5 ns	9 ns	-40 °C	125 ¯C	8-DFN (4x4)	N-Channel MOSFET	2	Non-Inverting
Renesas Electronics Corporation ISL2111ABZ-T	Independent	8-SOIC	1.4 V 2.2 V	Surface Mount	8 V	14 V	114 V	3 A	4 A	Half-Bridge	7.5 ns	9 ns	-40 °C	125 ¯C	8-SOIC	MOSFET (N-Channel) N-Channel MOSFET	2	Non-Inverting	3.9 mm	0.154 in
Renesas Electronics Corporation ISL2111BR4Z	Independent	8-VDFN Exposed Pad	1.4 V 2.2 V	Surface Mount	8 V	14 V	114 V	3 A	4 A	Half-Bridge	7.5 ns	9 ns	-40 °C	125 ¯C	8-DFN (4x4)	N-Channel MOSFET	2	Non-Inverting
Renesas Electronics Corporation ISL2111ARTZ	Independent	10-WDFN Exposed Pad	1.4 V 2.2 V	Surface Mount	8 V	14 V	114 V	3 A	4 A	Half-Bridge	7.5 ns	9 ns	-40 °C	125 ¯C	10-TDFN (4x4)	N-Channel MOSFET	2	Non-Inverting

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 5.25
		10	$ 4.71
		25	$ 4.45
		100	$ 3.86
		250	$ 3.66
		500	$ 3.29
		1000	$ 2.77
	Digi-Reel®	1	$ 5.25
		10	$ 4.71
		25	$ 4.45
		100	$ 3.86
		250	$ 3.66
		500	$ 3.29
		1000	$ 2.77
	Tape & Reel (TR)	2500	$ 2.63

Description

General part information

ISL2111 Series

The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDDoperational supply range has been extended to 8VDC. The ISL2110 has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2111, like those of the ISL2110, can now safely swing to the VDDsupply rail.

Documents

Technical documentation and resources

ISL2110, ISL2111 Datasheet

Datasheet