Discrete Semiconductor Products

SI4488DY-T1-GE3

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MOSFET N-CH 150V 3.5A 8SO

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Discrete Semiconductor Products

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MOSFET N-CH 150V 3.5A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4488DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.56 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]
Vishay General Semiconductor - Diodes Division SI4488DY-T1-E3	150 V	Surface Mount	50 mOhm	10 V	MOSFET (Metal Oxide)	1.56 W	20 V	-55 °C	150 °C	3.5 A	8-SOIC	N-Channel	2 V	36 nC	8-SOIC	3.9 mm	0.154 in
Vishay General Semiconductor - Diodes Division SI4488DY-T1-GE3	150 V	Surface Mount	50 mOhm	10 V	MOSFET (Metal Oxide)	1.56 W	20 V	-55 °C	150 °C	3.5 A	8-SOIC	N-Channel	2 V	36 nC	8-SOIC	3.9 mm	0.154 in

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General part information

N-Channel 150 V 3.5A (Ta) 1.56W (Ta) Surface Mount 8-SOIC

Technical documentation and resources