Zenode.ai Logo
Beta
SOT 89
Discrete Semiconductor Products

CXT5551-TP

Active

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
SOT 89
Discrete Semiconductor Products

CXT5551-TP

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationCXT5551-TP
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80 hFE
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-243AA
Power - Max [Max]500 mW
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]160 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1000$ 0.12

Description

General part information

CXT5551 Series

Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 500 mW Surface Mount SOT-89

Documents

Technical documentation and resources