Specification	NVMFWS016N10MCLT1G

Current - Continuous Drain (Id) @ 25°C	46 A, 10.9 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1250 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	64 W, 3.6 W
Qualification	AEC-Q101
Supplier Device Package	4.9x5.9, 8-SOFL-WF, 5-DFNW
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NVMFS016N10MCL Series

MOSFET - Power, Single, N-Channel 100 V, 14 mΩ, 46A

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Qualification	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Grade	Power Dissipation (Max)
ON Semiconductor NVMFWS016N10MCLT1G	3 V	1250 pF	4.5 V 10 V	MOSFET (Metal Oxide)	4.9x5.9 5-DFNW 8-SOFL-WF	N-Channel	19 nC	20 V	10.9 A 46 A	AEC-Q101	8-PowerTDFN 5 Leads	Surface Mount Wettable Flank	-55 °C	175 ░C	100 V	Automotive	3.6 W 64 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET - Power, Single, N-Channel 100 V, 14 mΩ, 46A

Technical documentation and resources