Discrete Semiconductor Products

AON6912ALS_102

Obsolete

MOSFET 2N-CH 30V 52A 8DFN

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 52A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON6912ALS_102

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	10 A, 34 A, 52 A, 13.8 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	17 nC, 20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1300 pF
Input Capacitance (Ciss) (Max) @ Vds [Min]	910 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max	1.9 W, 22 W, 2.1 W, 30 W
Rds On (Max) @ Id, Vgs	13.7 mOhm, 7.3 mOhm
Supplier Device Package	8-DFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Configuration	Gate Charge (Qg) (Max) @ Vgs	Technology	Power - Max	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs(th) (Max) @ Id
Alpha & Omega Semiconductor Inc. AON6912ALS
Alpha & Omega Semiconductor Inc. AON6912ALS_102	7.3 mOhm 13.7 mOhm	Surface Mount	10 A 13.8 A 34 A 52 A	30 V	2 N-Channel (Dual) Asymmetrical	17 nC 20 nC	MOSFET (Metal Oxide)	1.9 W 2.1 W 22 W 30 W	8-DFN (5x6)	910 pF	1300 pF	150 °C	-55 °C	8-PowerVDFN	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Mosfet Array 30V 10A (Ta), 34A (Tc), 13.8A (Ta), 52A (Tc) 1.9W (Ta), 22W (Tc), 2.1W (Ta), 30W (Tc) Surface Mount 8-DFN (5x6)

Technical documentation and resources

No documents available