Specification	TSM043NB04CZ

Current - Continuous Drain (Id) @ 25°C	124 A
Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	74 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4928 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W, 2 W
Rds On (Max) @ Id, Vgs	4.3 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

TSM043 Series

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Taiwan Semiconductor Corporation TSM043NH04CR RLG	3.6 V	100 W	40 V	N-Channel	4.3 mOhm	20 V	MOSFET (Metal Oxide)	7 V 10 V	Surface Mount Wettable Flank	8-PDFNU (5x6)	175 °C	-55 °C	8-PowerTDFN	2531 pF
Taiwan Semiconductor Corporation TSM043NB04CZ	4 V	2 W 125 W	40 V	N-Channel	4.3 mOhm	20 V	MOSFET (Metal Oxide)		Through Hole	TO-220	150 °C	-55 °C	TO-220-3		74 nC	4928 pF	124 A	16 A
Taiwan Semiconductor Corporation TSM043NH04LCR RLG	2.2 V	100 W	40 V	N-Channel	4.3 mOhm	16 V	MOSFET (Metal Oxide)	4.5 V 10 V	Surface Mount Wettable Flank	8-PDFNU (5x6)	175 °C	-55 °C	8-PowerTDFN	2480 pF					42 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 16A (Ta), 124A (Tc) 2W (Ta), 125W (Tc) Through Hole TO-220

Technical documentation and resources