Discrete Semiconductor Products

R6002ENDTL

LTB

MOSFET N-CH 600V 1.7A CPT3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 600V 1.7A CPT3

Technical Specifications

Parameters and characteristics for this part

Specification	R6002ENDTL

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.5 nC
Input Capacitance (Ciss) (Max) @ Vds	65 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	3.4 Ohm
Supplier Device Package	CPT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C
Rohm Semiconductor R6002ENDTL	DPAK (2 Leads + Tab) SC-63 TO-252-3	65 pF	600 V	20 V	3.4 Ohm	MOSFET (Metal Oxide)	CPT3	20 W	N-Channel	6.5 nC	Surface Mount	10 V	150 °C	1.7 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 1.7A (Tc) 20W (Tc) Surface Mount CPT3

Technical documentation and resources

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