Discrete Semiconductor Products

SQJA34EP-T1_GE3

Active

MOSFET N-CH 40V 75A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 40V 75A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJA34EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	68 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.3 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Grade	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Qualification	FET Type	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SQJA34EP-T1_GE3	20 V	PowerPAK® SO-8	10 V	50 nC	Surface Mount	4.3 mOhm	-55 °C	175 ░C	40 V	PowerPAK® SO-8	2800 pF	MOSFET (Metal Oxide)	Automotive	68 W	3.5 V	AEC-Q101	N-Channel	75 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 75A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources