Specification	FFSD10120A

Capacitance @ Vr, F	612 pF
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-252AA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.75 V

FFSD10120A Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, DPAK

Part	Supplier Device Package	Mounting Type	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case
ON Semiconductor FFSD10120A	TO-252AA	Surface Mount	No Recovery Time	1.2 kV	200 µA	612 pF	0 ns	1.75 V	SiC (Silicon Carbide) Schottky	DPAK (2 Leads + Tab) SC-63 TO-252-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.32
		10	$ 3.63
		100	$ 2.93
		500	$ 2.87
	Digi-Reel®	1	$ 4.32
		10	$ 3.63
		100	$ 2.93
		500	$ 2.87
	Tape & Reel (TR)	2500	$ 2.87
Newark	Each (Supplied on Full Reel)	1	$ 3.61
		3000	$ 3.45
		6000	$ 3.22
		12000	$ 2.99
		18000	$ 2.87
		30000	$ 2.83
ON Semiconductor	N/A	1	$ 2.64

Description

General part information

FFSD10120A Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.