Discrete Semiconductor Products

SUD09P10-195-BE3

LTB

MOSFET P-CH 100V 8.8A DPAK

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Discrete Semiconductor Products

LTB

MOSFET P-CH 100V 8.8A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SUD09P10-195-BE3

Current - Continuous Drain (Id) @ 25°C	8.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	34.8 nC
Input Capacitance (Ciss) (Max) @ Vds	1055 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	32.1 W, 2.5 W
Rds On (Max) @ Id, Vgs	195 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology
Vishay General Semiconductor - Diodes Division SUD09P10-195-BE3	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1055 pF	4.5 V 10 V	TO-252AA	8.8 A	2.5 V	34.8 nC	P-Channel	2.5 W 32.1 W	100 V	195 mOhm	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)

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General part information

P-Channel 100 V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252AA

Technical documentation and resources